National projects
The project “High-voltage GaN HEMT transistors for linear power supply and inductor board applications” (PB_GaNLIN) is supported by an earmarked grant from the President of the Lukasiewicz Center.
Total value of the project: 7 628 985,75 PLN
Funding: 6 671 588,25 PLN
The global electricity industry is seeking alternatives in the face of the existing technology limitations of current silicon semiconductor-based devices. Technology advances are forcing the use of devices that are more energy efficient, operate at higher voltages and are faster. An additional element is making the component operation quieter and the reduction of temperature gradients in electronic systems. Gallium nitride (GaN)-based semiconductors are a promising alternative due to their abilities to maintain higher link energy density, higher switching frequencies and increased power with low device loss. Compared to silicon-based transistors, GaN transistors can switch higher powers at higher frequencies, operate at higher temperatures and are more reliable while being smaller and cheaper to manufacture. The project is a response to the demand from Polish companies such as Amica S.A. and Lars Ligthing Sp. z o.o. for Polish GaN HEMT transistor technology for e.g. linear power supplies and induction cookers. The objective of the project is to market the Polish GaN HEMT (high electron mobility transistor) 650 V and 1200 V for power electronics for high-power industries. Such a solution will give Polish industry the opportunity to introduce innovative indigenous technology solutions in the field of electronics into its own products and business products. This will increase the competitiveness of Polish companies on the European and global markets. To meet this objective, high voltage transistor technology will be developed at Łukasiewicz – IMIF, verified and consulted with ITRI and manufactured by UMC. The technology for 650 V is currently at TRL 6. Once completed, it will be TRL 9. The technology for other voltage classes (100 V, 200 V, 750 V, 950 V 1200 V) is currently at TRL 3. However, the transition to higher TRLs will be relatively quick, given the scaling of the developed 650 V technology to higher (or lower) voltages. 1200 V and 900 V transistors are not yet available on the market both locally and globally and these will be the target of the project in the first instance. The new architecture will then be scaled to lower voltages. The project plans to develop a technology platform for GaN HEMT transistors on silicon substrates first, followed by sapphire and SiC substrates, based on its own original research work. A key, original part of the technology will be protected through the filing of the relevant patent applications or is in the process of being patented to protect original solutions for the growth of GaN/AlGaN/GaN heterostructures or elements of GaN HEMT transistor technology. Łukasiewicz-IMiF has the know-how for fabrication and topology design of GaN HEM transistors, including key technology operations, e.g. shaping the gate region for normally off GaN HEMT transistors or fabricating thermally stable, planar isolation of individual devices by ion implantation. Transistors for voltages of 650 V and below are already available on the market while the technology developed by Łukasiewicz IMIF and the GaNLIN project consortium will be (at least partly) different from those currently offered, which can be protected by exclusive intellectual property rights. An important part of the project will be large-scale electrical, thermal, climatic, reliability and functional testing of the GaN HEMT transistors produced under the project so as to fully demonstrate the intended device performance, high reliability of the technology and suitability under near real-world conditions.
