Completed projects
The project “Development and functional testing of a GaN-based high-performance car charger prototype” (ZET_GANCHARGE) is supported by a specific grant from the President of the Łukasiewicz Centre.
Total project value: PLN 478,750
Subsidy: 335,125 PLN
Creating environmentally friendly electric vehicles requires, among other things, reducing their weight and, consequently, their energy consumption. Gallium nitride can excel in the creation of small and lightweight power electronic components for EVs. Gallium nitride-based transistors and diodes can switch higher powers at higher frequencies, operate at higher temperatures and be more reliable, while being smaller and cheaper to manufacture. This results in power electronic circuits with GaN-based components that can be smaller, more efficient, more reliable and operate in harsh environments, compared to silicon or silicon carbide-based devices. Currently, commercially available gallium nitride-based transistors have a maximum operating voltage of approximately 650 V, making them ideal for single-phase applications.
The planned outcomes of the project are the acquisition of experience designing devices with GaN transistors, developing control and assembly techniques. They will allow the wider introduction of GaN transistors in further designs, together with all their benefits. The developed model of the device is likely to gain industry interest, which could result in further work and the implementation of the device into production.
